The effect of size reduction on switching characteristics is investigated experimentally for the low-switching-power operation of GaAs-based quantum wire transistors (QWRTr's) utilizing etched AlGaAs/GaAs nanowires controlled by Schottky wrap gates (WPGs). WPG QWRTr's in which the wire width, W, and gate length, L_G, were systematically changed are fabricated and characterized with respect to operation temperature, switching voltage, ΔV_G, gate voltage to Fermi energy scaling factor, α, and power-delay product, PDP. When W is less than 200 nm, more than 80% of the fabricated devices exhibit quantized conductance at 30 K. The device with W=40 nm shows a large α of 0.7. Decreasing LG into the sub-100-nm range was found to be effective for improving power consumption, since the short channel effect was suppressed by tight potential control in the WPG structure.
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